Difference between revisions of "Make and Test a Semiconductor Device"
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| − | - Useful Information<br> | + | - Useful Information - <br> |
| + | Follow the RCA Clean method below with a hydrofluoric acid (HFA) wash to remove oxide layer. The oxide layer will take a few hours in a normal atmosphere to regrow so deposition of metal should proceed immediately after the HFA wash.<br><br> | ||
[[Media:RCA_Clean.pdf]]<br> | [[Media:RCA_Clean.pdf]]<br> | ||
[[Media:Making_ohmic_contacts.pdf]] | [[Media:Making_ohmic_contacts.pdf]] | ||
Latest revision as of 17:06, 22 May 2019
- Useful Information -
Follow the RCA Clean method below with a hydrofluoric acid (HFA) wash to remove oxide layer. The oxide layer will take a few hours in a normal atmosphere to regrow so deposition of metal should proceed immediately after the HFA wash.
Media:RCA_Clean.pdf
Media:Making_ohmic_contacts.pdf
